Product Summary
The PMBT3906 is a PNP switching transistor in a SOT23 plastic package. The applications of the PMBT3906 include general amplification and switching.
Parametrics
PMBT3906 absolute maximum ratings: (1)collector-base voltage open emitter: -40 V; (2)collector-emitter voltage: -40 V; (3)emitter-base voltage: -6 V; (4)collector current (DC): -100 mA; (5)peak collector current: -200 mA; (6)peak base current - -100 mA; (7)total power dissipation: 250 mW; (8)storage temperature: -65 +150 ℃; (9)junction temperature: +150 ℃; (10)operating ambient temperature: -65 +150 ℃.
Features
PMBT3906 features: (1)Low current (max. 100 mA); (2)Low voltage (max. 40 V).
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
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PMBT3906 |
Other |
Data Sheet |
Negotiable |
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PMBT3906 /T3 |
NXP Semiconductors |
Transistors Bipolar (BJT) TRANS SW TAPE-11 |
Data Sheet |
Negotiable |
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PMBT3906,215 |
NXP Semiconductors |
Transistors Bipolar (BJT) PNP SW 200MA 40V |
Data Sheet |
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PMBT3906VS,115 |
NXP Semiconductors |
Transistors Bipolar (BJT) GENERAL PURPOSE TRANSISTOR |
Data Sheet |
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PMBT3906M,315 |
NXP Semiconductors |
Transistors Bipolar (BJT) GENERAL PURPOSE TRANSISTOR |
Data Sheet |
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PMBT3906,235 |
NXP Semiconductors |
Transistors Bipolar (BJT) TRANS SW TAPE-11 |
Data Sheet |
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PMBT3906YS,115 |
NXP Semiconductors |
Transistors Bipolar (BJT) DUALTRANS SW TAPE-7 |
Data Sheet |
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PMBT3906YS T/R |
NXP Semiconductors |
Transistors Bipolar (BJT) DUALTRANS SW TAPE-7 |
Data Sheet |
Negotiable |
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