Product Summary
The BAT 54C is a Planar Schottky barrier diode encapsulated in a SOT23 small plastic SMD package. Single diodes and double diodes with different pinning are available.
Parametrics
BAT 54C absolute maximum ratings: (1)continuous reverse voltage: 30 V; (2)continuous forward current: 200 mA; (3)repetitive peak forward current: 300 mA; (4)non-repetitive peak forward current: 600 mA; (5)storage temperature: -65 +150 ℃; (6)junction temperature: 125 ℃; (7)total power dissipation: 230 mW.
Features
BAT 54C features: (1)Low forward voltage; (2)Guard ring protected; (3)Small plastic SMD package.
Diagrams
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![]() BAT 15-02LRH E6327 |
![]() Infineon Technologies |
![]() Schottky (Diodes & Rectifiers) Silicon Schottky Diodes 4V 110mA |
![]() Data Sheet |
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![]() BAT 15-02LS E6327 |
![]() Infineon Technologies |
![]() Schottky (Diodes & Rectifiers) Silicon Schottky Diodes 4V 110mA |
![]() Data Sheet |
![]() Negotiable |
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![]() BAT 15-02LS E6433 |
![]() Infineon Technologies |
![]() Schottky (Diodes & Rectifiers) RF DIODES |
![]() Data Sheet |
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![]() BAT 15-04R E6327 |
![]() Infineon Technologies |
![]() Schottky (Diodes & Rectifiers) RF DIODES |
![]() Data Sheet |
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![]() |
![]() BAT 15-04W E6327 |
![]() Infineon Technologies |
![]() Schottky (Diodes & Rectifiers) Silicon Schottky Diodes 4V 110mA |
![]() Data Sheet |
![]() Negotiable |
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![]() |
![]() BAT 15-04W H6327 |
![]() Infineon Technologies |
![]() Diodes (General Purpose, Power, Switching) RF DIODE |
![]() Data Sheet |
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