Product Summary
The BAV70 consists of two high-speed switching diodes with common cathodes, fabricated in planar technology, and encapsulated in the small SOT23 plastic SMD package.
Parametrics
BAV70 absolute maximum ratings: (1)repetitive peak reverse voltage: 85 V; (2)continuous reverse voltage: 75 V; (3)ontinuous forward current: 215 mA; (4)repetitive peak forward current: 450 mA; (5)non-repetitive peak forward current: t = 1 ms: 4 A, t = 1 ms: 1 A, t = 1 s: 0.5 A; (6)total power dissipation: 250 mW; (7)storage temperature: -65 +150 ℃; (8)junction temperature: 150 ℃.
Features
BAV70 features: (1)Small plastic SMD package; (2)High switching speed: max. 4 ns; (3)Continuous reverse voltage: max. 70 V; (4)Repetitive peak reverse voltage: max. 75 V; (5)Repetitive peak forward current: max. 450 mA.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||||
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BAV70M,315 |
NXP Semiconductors |
Diodes (General Purpose, Power, Switching) SWITCHING DIODE |
Data Sheet |
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BAV70S,115 |
NXP Semiconductors |
Diodes (General Purpose, Power, Switching) DIODE SW TAPE-7 |
Data Sheet |
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BAV70SE6433 |
Infineon Technologies |
Diodes (General Purpose, Power, Switching) Silicon Switch Diode FOR HI-SPEED |
Data Sheet |
Negotiable |
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BAV70W,115 |
NXP Semiconductors |
Diodes (General Purpose, Power, Switching) 85V 175mA |
Data Sheet |
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BAV70WE6433XT |
Infineon Technologies |
Diodes (General Purpose, Power, Switching) Silicon Switching Diode 200mA |
Data Sheet |
Negotiable |
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BAV70DXV6T1 |
ON Semiconductor |
Diodes (General Purpose, Power, Switching) 70V 200mA Dual |
Data Sheet |
Negotiable |
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BAV70M T/R |
NXP Semiconductors |
Diodes (General Purpose, Power, Switching) SWITCHING DIODE |
Data Sheet |
Negotiable |
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BAV70LT3 |
ON Semiconductor |
Diodes (General Purpose, Power, Switching) 70V 200mA Dual |
Data Sheet |
Negotiable |
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